PART |
Description |
Maker |
TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
|
SGS Thomson Microelectronics STMicroelectronics ST Microelectronics
|
CFB1063 CFB1063P CFD1499Q |
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 200 hFE. Complementary CFD1499 2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 100 - 200 hFE. Complementary CFD1499P 2.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 120 hFE. Complementary CFB1063Q
|
Continental Device India Limited
|
BUZ21L BUZ21LE3045 |
N-Channel SIPMOS Power Transistor Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.085 Ohm, 21A, LL SIPMOS Power Transistor
|
Infineon Technologies AG
|
DXTN07100BP5-13 DXTN07100BP5 |
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR PowerDI?5 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR PowerDI垄莽5
|
Diodes Incorporated
|
STP45N10 STP45N10FI 5473 |
N-Channel 100V-0.027惟-45A- TO-220/TO-220FI Power MOS Transistor(N娌?????MOS?朵?绠? N - CHANNEL 100V - 0.027ohm - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR From old datasheet system
|
??????浣? SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 8A条(丁)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 4.9AI(四)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 1A条(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 28A条(丁)|04AE TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 600毫安(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五(巴西)直|5A条(丁)|04AE
|
Black Box, Corp. Bourns, Inc. Vishay Intertechnology, Inc. Samsung Semiconductor Co., Ltd. 3M Company
|
2SD1980 2SD2195 2SD1867 2SD1980TL |
Power Transistor (100V, 2A) Power Transistor (100V , 2A)
|
ROHM[Rohm]
|
ZXTP19100CFF ZXTP19100CFFTA |
2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100V, SOT23F, PNP medium power transistor
|
ZETEX PLC Diodes Incorporated Zetex Semiconductors
|
BUZ344 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-218, RDSon=0.035 Ohm, 50A, NL SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
SPP10N10 SPB10N10 SPI10N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=180mOhm, 10A, NL SIPMOS Power-Transistor SIPMOS功率晶体
|
Infineon Technologies AG
|
ZXTN25100DFHTA |
100V, SOT23, NPN medium power transistor
|
ZETEX[Zetex Semiconductors]
|
ZX5T953G-15 |
100V PNP MEDIUM POWER TRANSISTOR IN SOT223
|
Diodes Incorporated
|